| PART |
Description |
Maker |
| APT12080JVR |
POWER MOS V 1200V 15A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
ADPOW[Advanced Power Technology]
|
| APT12080LVR |
POWER MOS V 1200V 16A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6045SVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 600V 15A 0.450 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT1201R5B APT1201R5BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 10A 1.500 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| APT12040L2LL |
POWER MOS 7 1200V 30A 0.400 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
|
Advanced Power Technology Ltd.
|
| 7MBR15SA120 |
IGBT(1200V/15A/PIM)
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| FGA15N120ANTDTU |
1200V, 15A, NPT Trench IGBT
|
Fairchild Semiconductor
|
| 6MBP15VAA120-50 |
IGBT MODULE (V series) 1200V / 15A / IPM
|
Fuji Electric
|
| NGTB15N120L |
IGBT 1200V 15A FS1 Gen Mkt
|
ON Semiconductor
|
| RJK1051DPB-00-J5 RJK1051DPB-15 |
100V, 15A, 39m max. Silicon N Channel Power MOS FET Power Switching
100V, 15A, 39m?max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK4012DPE-12 RJK4012DPE-15 RJK4012DPE-00J3 |
400V - 15A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FGW15N120VD |
Discrete IGBT (High-Speed V series) 1200V / 15A
|
Fuji Electric
|
